IRFBG30 IRFBG30PBF TRNSISTOR
Product Title: IRFBG30 / IRFBG30PBF (Marking: IRFBG30 / N31K AI) 1000V 3.1A High Voltage N-Channel Power MOSFET (TO-220AB)
Product Specifications:
- Part Number / Marking: IRFBG30 / IRFBG30PBF (Top Marking Code: IRFBG30 / N31K AI)
- Manufacturer: Vishay Siliconix / International Rectifier (IR)
- Transistor Type: N-Channel Power MOSFET (Third Generation HEXFET® Power Technology)
- Package / Case: TO-220AB (3-Pin Through-Hole High Power Package)
- Drain-Source Voltage ($V_{DSS}$): $1000\text{V}$ ($1\text{kV}$) High Breakdown Voltage
- Single-Pulse Avalanche Energy ($E_{AS}$): $240\text{ mJ}$
- Operating Junction Temperature Range ($T_J$): $-55^\circ\text{C}\text{ to }+150^\circ\text{C}$
Short Description: High-voltage Vishay / IR IRFBG30 (top marking code: IRFBG30) $1000\text{V}$, $3.1\text{A}$ N-channel power MOSFET in a standard 3-pin TO-220AB package. Engineered with planar stripe technology to deliver extremely high breakdown voltage capability ($1000\text{V}$), fast switching performance, and high avalanche ruggedness. Designed specifically for off-line switched-mode power supplies (SMPS), high-voltage DC-DC converters, electronic ballasts, uninterrupted power supplies (UPS), and high-voltage flyback converter topologies. Essential replacement component for repairing blown high-voltage power supply switching stages, auxiliary power supplies, and inverter drive units.
IC උපාංග සහ Parts නැවත බර ගනු නොලැබේ | හුවමාරුවක් නැත | වගකීමක් නැත | මුදල් ආපසු ගෙවීමක් නැත කරුණාකර ඔබගේ අංකය පරීක්ෂා කර එය ඔබගේ පවතින නිෂ්පාදනය සමඟ ගලපන්න. ඔබ මෙම නිෂ්පාදනය අපගේ වෙබ් අඩවියෙන් මිලදී ගෙන එය මවු පුවරුවේ සවි කළ විට, එය ඔබේම අවදානම මත පවතිනු ඇත. කිසිදු දෝෂයකට අප වග කියනු නොලැබේ
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